- Samsung has started manufacturing the industry’s first 512GB UFS 3.1 chip, a storage solution that targets high-end smartphones like the upcoming Galaxy Note 20.
- The new storage chip will support write speeds three times faster than the Galaxy S20’s UFS 3.0 storage.
- Samsung says that a 100GB transfer will take just 90 seconds, compared to more than four minutes for UFS 3.0 memory.
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Most of this year’s flagships will support 5G connectivity, which will significantly improve data transfer speeds once 5G networks are in place. That sort of upgrade means that several other components need to be upgraded for users to actually take advantage of an overall faster device, and that includes the RAM and flash storage.
We’ve already seen handset makers employ LPDDR5 RAM in this year’s phones, which should make a huge difference going forward. Many of them will embrace faster flash storage, and Samsung just announced that it’s ready to mass-produce the kind of speedy storage that faster phones will require. This UFS 3.1 storage will likely power the Galaxy Note 20 later this year.
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Galaxy Note 20 will have even faster storage than the Galaxy S20 originally appeared on BGR.com on Tue, 17 Mar 2020 at 17:02:55 EDT. Please see our terms for use of feeds.
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